<3.ml-(-on.au.ckoi u-^i , line. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn rf transistor BFQ591 description ? high power gain ? high current gain bandwidth product ? low noise figure applications ? designed for use in matv or catv amplifiers and rf communications subscribers equipment. absolute maximum ratings(ta=25c) symbol vcbo vceo vebo ic pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector power dissipation @tc=25c junction temperature storage temperature range value 20 15 3 200 2.25 175 -65-150 unit v v v ma w 'c 'c sot-89 package 1: base 2: emitter 3: collector d: " l= cj dim a b b: c d d: e e: e el l mm min i. ;o 0. 32 0.36 0,35 i. ;o i. ;o :. so 3.9: max 1.60 0,52 0,56 0. 11 ;. is 1.80 2,60 ;, 2c l cotyp 2.90 0.90 3. :o 1. 10 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn rf transistor BFQ591 electrical characteristics tc=25'c unless otherwise specified symbol v(br)cs v(br)cbo v(br)ebo icbo hfe ft pg pg cre i s21e i 2 vo parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector cutoff current dc current gain current-gain ? bandwidth product power gain power gain feedback capacitance insertion power gain output voltage conditions lc=0.1ma;lb=0 lc= 0.1ma; ie= 0 le=0.1ma;lc=0 vcb=10v; ie=0 lc= 70ma ; vce= 8v lc= 70ma ; vce= 12v; f= 1ghz lc= 70ma;vce= 12v; f= 900mhz lc= 70ma;vce= 12v; f= 2ghz le=0;vcb=12v;f=1mhz lc= 70ma ; vce= 12v; f= 1ghz note min 15 20 3 60 typ. 7 11 5.5 0.8 10 700 max 0.1 250 unit v v v ua ghz db db pf db mv note; dim = 60 db (din45004b); vp = vo; vq = vo -6 db; fp = 795.25 mhz; fq = 803.25 mhz; fr = 803.25 mhz; measured @ f(p+q+r) = 793.25 mhz. 3 , 1 1 1 1??, 1 1 1 250 'tot 200 150 100 50 voe = 12 v 50 100 150 .,..,.200 power derating curve sl "j 1c-2 10-' 1 10 , 102 lc imaj dc current gain as a function of collector current: typical values
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